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1SS352
SILICON EPITAXIAL PLANAR DIODE
Features * Low forward voltage * Fast Reverse Recovery Time * Small Total Capacitance
PINNING PIN 1 2 DESCRIPTION Cathode Anode
2
1
W2
Application * Ultra high speed switching
Top View Marking Code: "W2" Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Maximum (Peak) Reverse Voltage Reverse Voltage Average Forward Current Maximum (Peak) Forward Current Surge Forward Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range
Symbol VRM VR IO IFM IFSM Ptot Tj Tstg
Value 85 80 100 200 1 200 125 - 55 to + 125
Unit V V mA mA A mW
O
C C
O
Characteristics at Ta = 25 OC
Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 30 V at VR = 80 V Total Capacitance at f = 1 MHz Reverse Recovery Time at IF = 10 mA Symbol VF Max. 1.2 Unit V
IR
0.1 0.5 3 4
A
CT trr
pF ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 07/04/2009
1SS352
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 07/04/2009
1SS352
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads SOD-323
A c
HE D A
E
bp
UNIT mm
A 1.10 0.80
bp 0.40 0.25
C 0.15 0.00
D 1.80 1.60
E 1.35 1.15
HE 2.80 2.30
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 07/04/2009

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